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| COMMERCIAL LASERS Diode Lasers, Single-mode 50 to 200 mW, 810/830/852 nm 54xx Series Key Features * 200 mW kink-free power * Narrow spectral width * High efficiency * Low astigmatism * High reliability Applications * Illumination * Printing * Sensing * Medical applications * Imaging High-resolution applications including optical data storage, image recording, spectral analysis, printing, point-to-point free-space communications and frequency doubling all require diffraction-limited sources. Faster writing, wider dynamic range and better signal-to-noise ratio may be achieved with JDSU's high-reliability 5400 Series single-mode diode lasers. Available in power levels up to 200 mW kink-free, this advanced diode laser combines a quantum well structure and a real-refractive index-guided singlemode waveguide to provide high power, low astigmatism, narrow spectral width and a single spatial mode Gaussian far field. Our 5400 Series diode lasers are among the most reliable high-power diode lasers available in the industry today. The 5400 Series diode lasers operate in single longitudinal mode under some conditions. Like in all Fabry-Perot index-guided diode lasers, spectral broadening, mode hopping and longitudinal mode instability may occur due to small changes in drive current, diode-junction temperature or optical feedback. The unique diode structure features high reliability with long operating life and very low early failure rate. The highest brightness (20 MW/cm2 steradian) is provided by our 5430. NORTH AMERICA: 800 498-JDSU (5378) WORLDWIDE: +800 5378-JDSU WEBSITE: www.jdsu.com 54XX SERIES DIODE LASERS 2 Dimensions Diagrams (Specifications in inches [mm] unless otherwise noted.) Standard Tolerances inches: x.xx = 0.02 mm: x.x = 0.5 x.xxx = 0.010 x.xx = 0.25 Package Style: SOT-148 Window (G1) Pinout 0.05 (1.3) 0.26 Nom. (6.6) 0.20 (5.1) 0.14 (3.5) Laser Facet Depth = 0.04 (1.0) Nom. 0.354 0.005 (9.00 0.13) 0.260 0.005 (6.60 0.13) 0.14 (3.6) Pin 1 2 3 Description 3 Laser cathode (-) Laser anode, MPD cathode and case ground Monitor photodiode anode (+) 2 1 0.10 (2.5) Laser Output Window: AR Coating, Both Surfaces Thickness: 0.0100 0.002 (0.25 0.05) Package Style: TO-56 Window (J1) Pinout 0.04 (1.0) 0.26 (6.5) 0.14 (3.6) 0.10 (2.4) Laser Facet Depth = 0.05 (1.2) Nom. 3 2 1 0.08 (2.0) Laser Output 0.14 (3.6) 0.17 (4.2) 0.05 (1.3) Pin 1 2 3 Description Laser cathode (-) Laser anode, MPD cathode and case ground Monitor photodiode anode (+) Window: AR Coating, Both Surfaces Thickness: 0.010 0.001 (0.25 0.03) 54XX SERIES DIODE LASERS 3 Available Configurations 5400 Series 5401-G1 5401-J1 5410 Series 5411-G1 5411-J1 5420 Series 5421-G1 5421-J1 5430 Series 5431-G1 5431-J1 Electro-optical Specifications Parameter Laser Characteristics CW output power, kink-free2 Center wavelength Spectral width1 Slope efficiency Conversion efficiency Emitting dimensions FWHM beam divergence Parallel to junction Perpendicular to junction Threshold current Operating current Operating voltage Series resistance Thermal resistance Recommended case temperature Absolute Maximum Ratings Reverse voltage Case operating temperature Storage temperature range Lead soldering temperature Monitor Photodiode Sensitivity G1 package J1 package Capacitance Breakdown voltage Operating voltage Symbol Min. Po c D = Po/(Iop-Ith) = Po/(IopVop) WxH // Ith Iop Vop Rs Rth Tc - - - 0.75 - - - - - - - - - -20 5400 Series Typ. Max. - (note5) 3 0.85 30 3x1 9 30 35 95 (note4) 4.0 60 - 50 - 5 - - - - - 45 105 - 6.0 - 30 Min. - - - 0.75 - - - - - - - - - -20 5410 Series Typ. Max. - (note5) 3 0.85 30 3x1 9 30 35 160 (note4) 4.0 60 - 100 - 5 - - - - - 45 170 - 6.0 - 30 Unit mW nm mW/mA % m degrees degrees mA mA C/W C Vrl Top Tstg Tis - -20 -40 - - - - - 3 50 80 250 - -20 -40 - - - - - 3 50 80 250 V C C C (5 sec.) - - - Vbd Vop 0.1 3.0 - - - - - 6 25 10 20 24 - - - 0.1 3.0 - - - - - 6 25 10 20 24 - - - A/mW A/mW pF V V 1. Emission bandwidth for 90% integrated power. 2. Typical values at 25 C and 0.6 NA collection optics. 3. Features common to all 5400 series diode lasers include: a. Duty factor of 100%. b. Temperature coefficient of wavelength is approximately 0.3 nm/C. c. Temperature coefficient of threshold current can be modeled as: ITH2 = ITH1 exp [(T2 - T1)/T0] where T0 is a device constant of about 110 K. d. Temperature coefficient of operating current is approximately 0.5 to 0.7% per C. 4. Forward voltage is typically: Vf = 1.5 V + Iop x Rs. 5. Wavelength ranges for the 5400 and 5410 series: 800-820 nm 810-850 nm 842-862 nm A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5. 6. Astigmatism is less than 5 m. 54XX SERIES DIODE LASERS 4 Electro-optical Specifications Continued Parameter Laser Characteristics CW output power, kink-free2 Center wavelength Spectral width1 Slope efficiency Conversion efficiency Emitting dimensions FWHM beam divergence Parallel to junction Perpendicular to junction Threshold current Operating current Operating voltage Series resistance Thermal resistance Recommended case temperature Absolute Maximum Ratings Reverse voltage Case operating temperature Storage temperature range Lead soldering temperature Monitor Photodiode Sensitivity Capacitance Breakdown voltage Operating voltage Symbol Min. Po c D = Po/(Iop-Ith) = Po/(IopVop) WxH // Ith Iop Vop Rs Rth Tc - - - 0.75 - - - - - - - - - -20 5420 Series Typ. Max. - (note5) 3 0.85 30 3x1 9 30 35 210 (note4) 4.0 60 - 150 - 5 - - - - - 45 230 - 6.0 - 30 Min. - - - 0.75 - - - - - - - - - -20 5430 Series Typ. Max. - (note5) 3 0.85 30 3x1 9 30 40 270 (note4) 4.0 60 - 200 - 5 - - - - - 50 300 - 6.0 - 30 Unit mW nm mW/mA % m degrees degrees mA mA C/W C Vrl Top Tstg Tis - -20 -40 - - - - - 3 50 80 250 - -20 -40 - - - - - 3 50 80 250 V C C C (5 sec.) - - Vbd Vop 0.1 - - - - 6 25 10 20 - - - 0.1 - - - - 6 25 10 20 - - - A/mW pF V V 1. Emission bandwidth for 90% integrated power. 2. Typical values at 25 C and 0.6 NA collection optics. 3. Features common to all 5400 series diode lasers include: a. Duty factor of 100%. b. Temperature coefficient of wavelength is approximately 0.3 nm/C. c. Temperature coefficient of threshold current can be modeled as: ITH2 = ITH1 exp [(T2 - T1)/T0] where T0 is a device constant of about 110 K. d. Temperature coefficient of operating current is approximately 0.5 to 0.7% per C. 4. Forward voltage is typically: Vf = 1.5 V + Iop x Rs. 5. Wavelength ranges for the 5420 series: 800-820 nm 810-850 nm 842-862 nm Wavelength range for the 5430 series is limited to 820-840 nm. A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5. 6. Astigmatism is less than 5 m. 54XX SERIES DIODE LASERS 5 Typical Optical Characteristics Light vs. Current Characteristics Light vs. Current Characteristics Light vs. Current Characteristics Far Field Energy Distribution Far Field Energy Distribution 5410 5420 150 200 5430 200 mW 160 mW FWHM = 30o FWHM = 9o 100 mW CW Output Power (mW) 100 50 5400 75 100 0 40 80 120 160 200 Current (mA) 0 50 100 150 200 Current (mA) 0 60 120 180 240 300 Current (mA) 40 20 0 20 40 20 10 (degrees) 0 10 20 (degrees) Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at customer.service@jdsu.com. Sample: 54-00202 Part Number 54-00202 54-00203 Call for part number 54-00204 54-00205 54-00206 54-00207 Call for part number 54-00210 Call for part number 54-00211 Call for part number 54-00212 Call for part number 54-00213 54-00214 Power 50 mW 50 mW 50 mW 50 mW 100 mW 100 mW 100 mW 150 mW 150 mW 150 mW 150 mW 150 mW 150 mW 200 mW 200 mW 200 mW Wavelength 810 (5) 830 (-10/+20) 830 (-10/+20) 852 (10) 810 (5) 830 (-10/+20) 852 (10) 810 (5) 810 (5) 830 (10) 830 (10) 852 (10) 852 (10) 830 (10) 830 (10) 852 (10) Package 5.6 mm TO-56 5.6 mm TO-56 9 mm SOT-148 5.6 mm TO-56 5.6 mm TO-56 5.6 mm TO-56 5.6 mm TO-56 9 mm SOT-148 5.6 mm TO-56 9 mm SOT-148 5.6 mm TO-56 9 mm SOT-148 5.6 mm TO-56 9 mm SOT-148 5.6 mm TO-56 5.6 mm TO-56 54XX SERIES DIODE LASERS User Safety Safety and Operating Considerations The laser light emitted from this diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser or into the collimated beam along its optical axis when the device is in operation. CAUTION: THE USE OF OPTICAL INSTRUMENTS WITH THIS PRODUCT WILL INCREASE EYE HAZARD. Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with the component must be employed such that the maximum peak optical power cannot be exceeded. CW diode lasers may be damaged by excessive drive current or switching transients. When using power supplies, the diode laser should be connected with the main power on and the output voltage at zero. The current should be increased slowly while monitoring the diode laser output power and the drive current. Device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature is advised. For example, life expectancy will decrease by a factor of four if the case is operated at 50 C rather than 30 C. A proper heatsink for the diode laser on a thermal radiator will greatly enhance laser life. Firmly mount the laser on a radiator with a thermal impedance of less than 2 C/W for increased reliability. ESD PROTECTION - Electrostatic discharge is the primary cause of unexpected diode laser failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling diode lasers. Labeling 21 CFR 1040.10 Compliance Because of the small size of these devices, each of the labels shown is attached to the individual shipping container. They are illustrated here to comply with 21 CFR 1040.10 as applicable under the Radiation Control for Health and Safety Act of 1968. Serial Number Identification Label Output Power Danger Label Package Aperture Labels JDS Uniphase Corporation MODEL: MANUFACTURED: WAVELENGTH: I op: S/N: DANGER INVISIBLE LASER RADIATION* DANGER INVISIBLE LASER RADIATION IS EMITTED AS SHOWN. 3052 AVOID DIRECT EXPOSURE TO BEAM GaAlAs *SEE MANUAL Diode 500 mW avg. 3009 Laser Radiation This laser product complies with 21 CFR 1040 as applicable CLASS III B LASER PRODUCT G1, J1 Package Diodes NORTH AMERICA: 800 498-JDSU (5378) WORLDWIDE: +800 5378-JDSU WEBSITE: www.jdsu.com 54xxDIODELASER.DS.CL.AE June 2008 Product specifications and descriptions in this document subject to change without notice. (c) 2008 JDS Uniphase Corporation 10127872 007 0608 |
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